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Since a molecular-beam apparatus was first successfully used by Cho and Arthur in the late 1960s to crystallize and investigate GaAs epilayers, high vacuum epitaxial growth techniques using particle beams have developed rapidly. This development accelerated when different semiconductor devices with quantum­ well structures were invented in the 1970s. The important implementation of these structures in devices like quantum-well lasers, high ele...

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this seco...