The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications.
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ISBN | 9783642632051 |
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Sprache | eng |
Cover | C, Electronics and Microelectronics, Instrumentation, Microwaves, RF and Optical Engineering, Microwaves, RF Engineering and Optical Communications, engineering, Electronics, Microelectronics, Microwaves, Optical engineering, Microwave technology, Kartonierter Einband (Kt) |
Verlag | Springer Nature EN |
Jahr | 2012 |
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